Insulated Gate Bipolar Transistors

Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247

Insulated Gate Bipolar Transistor, 110A I(C), 650V V(BR)CES, N-Channel, TO-247AD

Insulated Gate Bipolar Transistor, 380A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 510A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 290A I(C), 650V V(BR)CES, N-Channel

DISC IGBT XPT-HI VOLTAGE TO-263D

Trans IGBT Chip N-CH 600V 145A 400W 3-Pin(3+Tab) ISOPLUS 247

Insulated Gate Bipolar Transistor, 132A I(C), 650V V(BR)CES, N-Channel, TO-263AB

Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, TO-247

DISC IGBT XPT-GENX3 TO-247AD

IGBT Transistors igbt discrete

IGBT, IXYP20N120C4, Littelfuse High-speed IGBT for 20-50 kHz switching, optimized for low switching losses with high power density and low gate drive requirements. Features Positive thermal coefficient of Vce(sat) International standard package Applications Power inverters UPS Motor drives SMPS Battery chargers Welding machines Lamp ballasts

IGBT, IXYP30N120A4, Littelfuse Ultra low-Vsat IGBT for up to 5 kHz switching, optimized for low conduction losses with high power density and low gate drive requirements. Features Positive thermal coefficient of vce(sat) International standard package Applications Inrush current protection circuits Power inverters UPS Motor drives SMPS Battery chargers Welding machines Lamp ballasts

IGBT, IXYN100N120B3H1, Littelfuse Extreme light punch through IGBT, optimized for 5-30 kHz switching with high power density and low gate drive requirements. Features Square RBSOA Positive thermal coefficient of Vce(sat) Avalanche rated Anti-parallel ultra fast diode High current handling capability International standard package Applications Power inverters UPS Motor drives SMPS PFC circuits Battery chargers Welding machines Lamp ballasts

Insulated Gate Bipolar Transistor, 15A I(C), 650V V(BR)CES, N-Channel, TO-220AB

DISC IGBT XPT-GENX3 TO-3P (3)

IGBT MODULE POWER

Insulated Gate Bipolar Transistor, 480A I(C), 1200V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 40A I(C), 1500V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220AB

Insulated Gate Bipolar Transistor, 761A I(C), 1200V V(BR)CES, N-Channel