Littelfuse IXYN100N120B3H1 | 搜芯易Sourcengine

Littelfuse IXYN100N120B3H1

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IGBT, IXYN100N120B3H1, Littelfuse Extreme light punch through IGBT, optimized for 5-30 kHz switching with high power density and low gate drive requirements. Features Square RBSOA Positive thermal coefficient of Vce(sat) Avalanche rated Anti-parallel ultra fast diode High current handling capability International standard package Applications Power inverters UPS Motor drives SMPS PFC circuits Battery chargers Welding machines Lamp ballasts
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PUFM-X4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.6
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
690
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
125
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
450
Collector Current-Max (IC) (A)
165
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
5
Collector-emitter Voltage-Max (V)
1200
Screening Level / Reference Standard
UL RECOGNIZED