INFINEON TECHNOLOGIES AG FT150R12KE3B5BOSA1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG FT150R12KE3B5BOSA1

生命周期状态
Active
RoHS
符合RoHS标准
说明
IGBT MODULE POWER
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-XUFM-X18
Configuration
COMMON EMITTER, 3 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
3
Number of Terminals
18
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
350
Turn-off Time-Nom (toff) (ns)
850
Collector Current-Max (IC) (A)
200
Collector-emitter Voltage-Max (V)
1200