Insulated Gate Bipolar Transistors

Insulated Gate Bipolar Transistor, 60A I(C), 300V V(BR)CES, N-Channel, TO-247AD

IGBT 600V 75A 660W TO247

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-268

Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, TO-264AA

Insulated Gate Bipolar Transistor, 210A I(C), 300V V(BR)CES, N-Channel, TO-264AA

Insulated Gate Bipolar Transistor, 50A I(C), 800V V(BR)CES, N-Channel

IGBT, IXGN400N60A3, LITTELFUSE Ultra-low Vsat PT IGBT for up to 5 kHz switching with an international standard package, optimized for low conduction losses, and with advantages such as high power density, and low gate drive requirements. Features Isolation voltage 3000 V Square RBSOA Applications Power inverters UPS Motor drives SMPS PFC circuits Battery chargers Welding machines Lamp ballasts Inrush current protection circuits

Insulated Gate Bipolar Transistor, 78A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 20A I(C), 900V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor

IGBT Transistors igbt discrete

IGBT, IXYN80N90C3H1, Littelfuse High-speed IGBT for 20-50 kHz switching, optimized for low switching losses with high power density and low gate drive requirements. Features Square RBSOA Positive thermal coefficient of Vce(sat) High current handling capability International standard package Anti-parallel sonic diode Applications High frequency power inverters UPS Motor drives SMPS PFC circuits Battery chargers Welding machines Lamp ballasts

Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel

IGBTs to247 4500v 40a igbt

Trans IGBT Module N-CH 3300V 1.5KA 17000W 9-Pin IHVB190-3 Tray

Insulated Gate Bipolar Transistor, 63A I(C), 600V V(BR)CES, N-Channel, TO-247

Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247AD

IHMB module with soft switching Trench IGBT4

Dual IGBT Module with Fast IGBT2

1700V, 1200A, dual IGBT Module

Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, N-Channel

IGBT 600V 60A 200W TO247AD

Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, TO-263AB

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES

Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-263AB