FGH40T65SPD-F085
ONSEMI
- 生命周期状态Discontinued
- 说明Trans IGBT Chip N-CH 650V 80A 267W Automotive 3-Pin(3+Tab) TO-247 Tube
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max2.4 V
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-247
- JESD-609 Codee3
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Case ConnectionCOLLECTOR
- Terminal FinishMatte Tin (Sn) - annealed
- Terminal PositionSINGLE
- Additional FeatureRC-IGBT
- Number of Elements1
- Reference StandardAEC-Q101
- Number of Terminals3
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Nom (ton)56 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)48 ns
- Operating Temperature-Max175 Cel
- Operating Temperature-Min-55 Cel
- Collector Current-Max (IC)80 A
- Power Dissipation-Max (Abs)267 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max7.5 V
- Collector-emitter Voltage-Max650 V
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
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FGH40T65SPD-F085