RF Power Field-Effect Transistors
| 型号 | 说明 | 供应商库存 | 价格范围 | |
|---|---|---|---|---|
RF Power Field-Effect Transistor 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF FET LDMOS 65V 18.9DB SOT502B 产品规格书 |
| $73.63080 $73.80878 | 检查供应情况 | |
RF Power Field-Effect Transistor 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF FET LDMOS 65V 18DB SOT1120B 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF FET LDMOS 100V 21DB SOT467C 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor 产品规格书 |
| N/A N/A | 检查供应情况 | |
120-W; UHF – 2.5-GHz; GaN HEMT for WCDMA; LTE; MC-GSM 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor 产品规格书 |
| N/A N/A | 检查供应情况 | |
35-W RF Power GaN HEMT 产品规格书 |
| N/A N/A | 检查供应情况 | |
120-W; RF Power GaN HEMT 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET 产品规格书 |
| N/A N/A | 检查供应情况 |