Ampleon Netherlands B.V. BLP0408H9S30 | 搜芯易Sourcengine

Ampleon Netherlands B.V. BLP0408H9S30

生命周期状态
Contact Mfr
说明
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDFP-F2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLATPACK Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
SOURCE
Terminal Position
DUAL
Number of Elements
1
Reference Standard
IEC-60134
Number of Terminals
2
Power Gain-Min (Gp)
18.5 dB
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
Feedback Cap-Max (Crss)
0.24 pF
DS Breakdown Voltage-Min
108 V
Operating Temperature-Max
225 Cel
Transistor Element Material
SILICON