RF Power Field-Effect Transistors

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET

25-W; 18.0-GHz; GaN HEMT Die

RF MOSFET HEMT 28V 440166

Trans RF MOSFET 120V 0.75A 4-Pin Bare Die

60-W; 6.0-GHz; GaN HEMT Die

30 W; DC - 6.0 GHz; GaN HEMT

RF MOSFET HEMT 50V 440162

200-W; 4400 - 5000-MHz; 50-Ohm Input/Output-Matched; GaN HEMT

500-W; 1200 – 1400-MHz; GaN HEMT for L-Band Radar Systems

RF MOSFET HEMT 40V 12DFN

30-W; DC – 6-GHz; 50-V; GaN HEMT

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

PWR MOSFET RF N-CH 300V TO-247AD

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF FET LDMOS 65V 17.4DB SOT1120B

Trans GP BJT PNP 48V 0.1A Box

RF TRANS NPN 25V TO220