RF Power Field-Effect Transistors

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-39

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, P-Channel, High Electron Mobility FET

RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD

RF Power Field-Effect Transistor, 1-Element, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-247AD

RF TRANS NPN 33V 400MHZ 55HV

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor

RF JFET Transistors DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB

RF Power Field-Effect Transistor, KU Band, Gallium Arsenide, N-Channel, Junction FET

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Nitride, N-Channel, High Electron Mobility FET

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor

60-W; 3100 – 3500-MHz; 28-V GaN HEMT

RF MOSFET HEMT 28V 12DFN

RF MOSFET HEMT 28V 440193

RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET

120-W RF Power GaN HEMT

30-W; 3300 – 3900-MHz; 28-V; GaN HEMT for WiMAX

RF Power Field-Effect Transistor