Qorvo, Inc TGF2023-2-10 | 搜芯易Sourcengine

Qorvo, Inc TGF2023-2-10

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF JFET Transistors DC-18GHZ 50W TQGaN25 PAE 69.5% Gain 19dB
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
3A001.B.3.B.4
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-XUUC-N9
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
UNCASED CHIP Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HIGH ELECTRON MOBILITY
J-STD-609 Code
e4
Operating Mode
DEPLETION MODE
Terminal Finish
Gold (Au) - with Nickel (Ni) barrier
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
9
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
KU BAND
Power Gain-Min (Gp) (dB)
17.4
Drain Current-Max (ID) (A)
10
Transistor Element Material
GALLIUM NITRIDE
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30