RF Power Field-Effect Transistors

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

N-CHANNEL JUNCTION SILICON FET F

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET

15-W; 8.0-GHz; GaN HEMT Die

60-W; 8.0-GHz; GaN HEMT Die

RF Power Field-Effect Transistor

TRANS FET N-CH 84V 6MA GAN

15W GAN HEMT 28V 6.0GHZ FLANGE

10-W RF Power GaN HEMT

90-W RF Power GaN HEMT

RF MOSFET HEMT 28V 440166

8 W; 6.0 GHz; GaN HEMT Die

RF MOSFET HEMT 50V 440193

200-W RF Power GaN HEMT

200-W; 4400 - 5000-MHz; 50-Ohm Input/Output-Matched; GaN HEMT

RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET

800-W; 1200 – 1400-MHz; GaN HEMT for L-Band Radar Systems