Hitachi, Ltd. 2SK410 | 搜芯易Sourcengine

Hitachi, Ltd. 2SK410

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-CRFM-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
FLAT
FET Technology
METAL-OXIDE SEMICONDUCTOR
Terminal Position
RADIAL
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
8 A
Operating Temperature-Max
150 Cel
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
120 W
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
20