Insulated Gate Bipolar Transistors

IGBT, IXGT16N170, LITTELFUSE A high voltage IGBT with high current handling capability, a rugged NPT structure, and advantages such as high power density, ease of mounting with one screw, and being suitable for surface mounting. Features International standard package MOS gate turn-on - drive simplicity Molding epoxies meet UL 94 V-0 flammability classification Applications Capacitor discharge and pulser circuits AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies

IGBT 600V 42A 80W ISOPLUS247

IGBT 600V 60A 167W ISOPLUS247

Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-268AA

Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 260A I(C), 1200V V(BR)CES, N-Channel

IGBT 600V 75A 480W PLUS247

Insulated Gate Bipolar Transistor, 32A I(C), 2500V V(BR)CES, N-Channel, TO-268AA

IGBT 1200V 70A 300W TO264

IGBT 600V 55A 200W TO247AD

IGBT 1400V 70A 300W TO247

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-204AE

IGBT MOD 1200V 110A 500W SOT227B

Insulated Gate Bipolar Transistor, 340A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 380A I(C), 600V V(BR)CES, N-Channel, TO-264AA

Insulated Gate Bipolar Transistor, 33A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 164A I(C), 1200V V(BR)CES, N-Channel

IGBT 650V 50A 230W TO247AD

Insulated Gate Bipolar Transistor, 36A I(C), 1200V V(BR)CES, N-Channel, TO-247

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 800A I(C), 1200V V(BR)CES

Insulated Gate Bipolar Transistor, 1200A I(C), 1000V V(BR)CES

Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 1200V V(BR)CES