Insulated Gate Bipolar Transistors

IGBT 600V 55A 200W TO247AD

IGBT 1400V 70A 300W TO247

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-204AE

IGBT MOD 1200V 110A 500W SOT227B

Insulated Gate Bipolar Transistor, 340A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 380A I(C), 600V V(BR)CES, N-Channel, TO-264AA

Insulated Gate Bipolar Transistor, 33A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 164A I(C), 1200V V(BR)CES, N-Channel

IGBT 650V 50A 230W TO247AD

IGBT, IXYH30N120C3, Littelfuse High-speed IGBT for 20-50 kHz switching, optimized for low switching losses with high power density and low gate drive requirements. Features Square RBSOA High voltage package Positive thermal coefficient of Vce(sat) Avalanche rated International standard package Applications High frequency power inverters UPS Motor drives SMPS PFC circuits Battery chargers Welding machines Lamp ballasts

Insulated Gate Bipolar Transistor, 36A I(C), 1200V V(BR)CES, N-Channel, TO-247

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 800A I(C), 1200V V(BR)CES

Insulated Gate Bipolar Transistor, 1200A I(C), 1000V V(BR)CES

Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 1200V V(BR)CES

Insulated Gate Bipolar Transistor, 600V V(BR)CES

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel

Trans IGBT Chip N-CH 1700V 150A 3-Pin Die Wafer

Insulated Gate Bipolar Transistor, 1200V V(BR)CES

Insulated Gate Bipolar Transistor, 1200V V(BR)CES

Insulated Gate Bipolar Transistor, 35A I(C), 650V V(BR)CES, N-Channel, TO-263AB

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel