Insulated Gate Bipolar Transistors

IGBT, IXGA20N120B3, LITTELFUSE High speed low Vsat PT IGBTs 3-20 kHz switching, optimized for low conduction and switching losses, and with advantages such as high power density, and low gate drive requirements. Features Square RBSOA International standard package Applications Power inverters UPS Motor drives SMPS PFC circuits Welding machines Inductive heating

Insulated Gate Bipolar Transistor, 75A I(C), 1000V V(BR)CES

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES

Insulated Gate Bipolar Transistor, 150A I(C), 330V V(BR)CES, N-Channel, TO-263AB

Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-263AB

IGBT 1000V 20A 100W TO247AD

Insulated Gate Bipolar Transistor, 40A I(C), 800V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 40A I(C), 900V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 40A I(C), 900V V(BR)CES, N-Channel

IGBTs disc igbt pt-hifrequency to-247ad

Insulated Gate Bipolar Transistor

IGBT Transistors igbt npt-very hi voltage

IGBT 600V 60A 200W TO247AD

IGBT 600V 70A 190W TO247

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, TO-247AD

IGBT 600V 70A 190W TO247

IGBT 600V 76A 200W TO247AD

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD

IGBT 600V 40A TO-204AE

Insulated Gate Bipolar Transistor, 60A I(C), 300V V(BR)CES, N-Channel, TO-247AD

Insulated Gate Bipolar Transistor, 52A I(C), 600V V(BR)CES, N-Channel, TO-247

IGBT 900V 75A 400W TO264

IGBT 600V 75A 500W TO264

IGBT 600V 75A 480W TO264