Littelfuse IXGA20N120B3 | 搜芯易Sourcengine

Littelfuse IXGA20N120B3

生命周期状态
Active
RoHS
符合RoHS标准
说明
IGBT, IXGA20N120B3, LITTELFUSE High speed low Vsat PT IGBTs 3-20 kHz switching, optimized for low conduction and switching losses, and with advantages such as high power density, and low gate drive requirements. Features Square RBSOA International standard package Applications Power inverters UPS Motor drives SMPS PFC circuits Welding machines Inductive heating
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
VCEsat-Max (V)
3.1
Case Connection
COLLECTOR
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Additional Feature
LOW CONDUCTION LOSS
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
180
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
61
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
260
Turn-off Time-Nom (toff) (ns)
720
Collector Current-Max (IC) (A)
36
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
5
Collector-emitter Voltage-Max (V)
1200
Time@Peak Reflow Temperature-Max (s)
10