Insulated Gate Bipolar Transistors

IGBT Transistors 75 Amps 1200V 3.5 V Rds

IGBT 2500V 13A 150W TO268

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-268AA

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-268AA

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-268AA

DISC IGBT PT-MID FREQUENCY TO-26

IGBT Transistors igbt npt-hi voltage

LITTELFUSE - IXGT6N170AHV - Disc IGBT NPT-Hi Voltage TO-268AA / TUBE

IGBT 600V 200A 660W TO247

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 32A I(C), 2200V V(BR)CES, N-Channel

IXR3S02M

IGBT 600V 35A 190W TO263

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor

IGBT, IXA12IF1200HB, Littelfuse Manufactured through the state-of-the-art GenX IGBT process and an extreme-light punch through design platform, this device features high-current handling capabilities, high-speed switching abilities, low total energy loss, and low current fall times. It has a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Features Easy paralleling due to the positive temperature coefficient of the on-state voltage Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) Applications AC motor drives Solar inverter Medical equipment Uninterruptible power supply Air-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies Inductive heating, cookers Pumps, fans

Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-263AB

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 15A I(C), 1400V V(BR)CES, N-Channel, TO-247AD