Insulated Gate Bipolar Transistors

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247

Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, TO-247

IGBT 1200V 20A 85W TO268

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor, 32A I(C), 1200V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor, 9A I(C), 1200V V(BR)CES, N-Channel

IGBT Transistors igbt bimosfet-high volt

Insulated Gate Bipolar Transistor, 15A I(C), 1600V V(BR)CES, N-Channel, TO-247AD

IGBT, IXBH32N300, Littelfuse BiMOSFETs is a component in which the strengths of MOSFETs and IGBTs are combined.This high-voltage device is ideal for parallel operation due to the positive temperature coefficient of the saturation voltage and the forward voltage drop of the inner diode. In addition, this "free" intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current when the device is turned off and preventing high Ldi/dt voltage transients from damaging the device. Features High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity Easy to mount Applications Switched-mode and resonant-mode power supplies Uninterruptible Power Supplies (UPS) Laser and X-ray generators Capacitor discharge circuits High voltage pulser circuits High voltage test equipment AC switches

Insulated Gate Bipolar Transistor, 5.7A I(C), 1400V V(BR)CES, N-Channel, TO-247AD

Insulated Gate Bipolar Transistor

Insulated Gate Bipolar Transistor, 30A I(C), 1700V V(BR)CES, N-Channel, TO-268AA

Insulated Gate Bipolar Transistor, 21A I(C), 350V V(BR)CES, N-Channel, TO-263AB

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, TO-247

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, TO-263AB

Insulated Gate Bipolar Transistor, 10A I(C), 390V V(BR)CES, N-Channel, TO-252AA

Insulated Gate Bipolar Transistor, 21A I(C), 400V V(BR)CES, N-Channel, TO-252

Insulated Gate Bipolar Transistor, 21A I(C), 450V V(BR)CES, N-Channel, TO-252AA

Insulated Gate Bipolar Transistor, 21A I(C), 390V V(BR)CES, N-Channel, TO-263AB

Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel

IGBT CHIP

Insulated Gate Bipolar Transistor, 11A I(C), 1200V V(BR)CES, N-Channel, TO-263AB

IRG4BC30F - 600V FAST 1-8 KHZ DI

Trans IGBT Chip N-CH 600V 31A 3-Pin(3+Tab) TO-220AB