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IXBH32N300

Littelfuse

IXBH32N300 产品规格书
Littelfuse IXBH32N300
  • 生命周期状态
    Contact Mfr
  • RoHS
    符合RoHS标准
  • 说明
    IGBT, IXBH32N300, Littelfuse BiMOSFETs is a component in which the strengths of MOSFETs and IGBTs are combined.This high-voltage device is ideal for parallel operation due to the positive temperature coefficient of the saturation voltage and the forward voltage drop of the inner diode. In addition, this "free" intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current when the device is turned off and preventing high Ldi/dt voltage transients from damaging the device. Features High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity Easy to mount Applications Switched-mode and resonant-mode power supplies Uninterruptible Power Supplies (UPS) Laser and X-ray generators Capacitor discharge circuits High voltage pulser circuits High voltage test equipment AC switches
  • 类别
    Semiconductors Transistors Insulated Gate Bipolar Transistors
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • Application
    POWER CONTROL
  • JESD-30 Code
    R-PSFM-T3
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • JEDEC-95 Code
    TO-247AD
  • Package Shape
    RECTANGULAR
  • Package Style
    FLANGE MOUNT Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • J-STD-609 Code
    e3
  • VCEsat-Max (V)
    3.2
  • Case Connection
    COLLECTOR
  • Terminal Finish
    Matte Tin (Sn)
  • Terminal Position
    SINGLE
  • Additional Feature
    LOW CONDUCTION LOSS
  • Number of Elements
    1
  • Number of Terminals
    3
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • Power Dissipation-Max (W)
    400
  • Transistor Element Material
    SILICON
  • Turn-on Time-Nom (ton) (ns)
    573
  • Gate-emitter Voltage-Max (V)
    20
  • Peak Reflow Temperature (Cel)
    260
  • Turn-off Time-Nom (toff) (ns)
    795
  • Collector Current-Max (IC) (A)
    80
  • Operating Temperature-Max (Cel)
    150
  • Operating Temperature-Min (Cel)
    -55
  • Gate-emitter Thr Voltage-Max (V)
    5
  • Collector-emitter Voltage-Max (V)
    3000
  • Time@Peak Reflow Temperature-Max (s)
    10

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IXBH32N300