R1WV6416RBG-7SR#S0
Renesas Electronics Corp.
- 生命周期状态EOL
- RoHS符合RoHS标准
- 说明Low Power SRAM
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B48
- Memory Width16
- Organization4MX16
- Package CodeFBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density67108864 bit
- Memory IC TypeSTANDARD SRAM
- Operating ModeASYNCHRONOUS
- Terminal Pitch0.75 mm
- Access Time-Max70 ns
- Number of Words4194304 words
- Parallel/SerialPARALLEL
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Supply Current-Max60 mA
- Number of Terminals48
- Standby Current-Max2.4E-5 Amp
- Standby Voltage-Min2 V
- Number of Words Code4M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeBGA48,6X8,30
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Moisture Sensitivity Level3
- Peak Reflow Temperature (Cel)260
- Width8.5
- Length11
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R1WV6416RBG-7SR#S0