R1LV0108ESP-5SI#S0
Renesas Electronics Corp.
- 生命周期状态EOL
- RoHS符合RoHS标准
- 说明Low Power SRAM
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDSO-G32
- Memory Width8
- Organization128KX8
- Package CodeSOP
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory Density1048576 bit
- Memory IC TypeSTANDARD SRAM
- Operating ModeASYNCHRONOUS
- Terminal Pitch1.27 mm
- Access Time-Max55 ns
- Number of Words131072 words
- Parallel/SerialPARALLEL
- Temperature GradeINDUSTRIAL
- Terminal PositionDUAL
- Supply Current-Max25 mA
- Number of Functions1
- Number of Terminals32
- Standby Current-Max2.0E-6 Amp
- Standby Voltage-Min2 V
- Number of Words Code128K
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeSOP32,.56
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Max (Vsup)3.6 V
- Supply Voltage-Min (Vsup)2.7 V
- Supply Voltage-Nom (Vsup)3 V
- Moisture Sensitivity Level2
- Width11.4
- Length20.75
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