Renesas Electronics Corp. IDT71V632S7PFGI | 搜芯易Sourcengine

Renesas Electronics Corp. IDT71V632S7PFGI

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Cache SRAM, 64KX32, 7ns, CMOS, PQFP100
类别
Semiconductors Memory ICs SRAMs CACHE SRAM

ECCN
3A991.B.2.A
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Width
14 mm
Length
20 mm
I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PQFP-G100
Memory Width
32
Organization
64KX32
Package Code
LQFP
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
FLATPACK, LOW PROFILE Meter
Surface Mount
YES
Terminal Form
GULL WING
Memory Density
2097152 bit
Memory IC Type
CACHE SRAM
Operating Mode
SYNCHRONOUS
Terminal Pitch
0.65 mm
Access Time-Max
7 ns
Number of Words
65536 words
Parallel/Serial
PARALLEL
Terminal Finish
Matte Tin (Sn) - annealed
Seated Height-Max
1.6 mm
Temperature Grade
INDUSTRIAL
Terminal Position
QUAD
Additional Feature
ALSO REQUIRES 3.3V I/O SUPPLY
Supply Current-Max
160 mA
Number of Functions
1
Number of Terminals
100
Standby Current-Max
0.015 Amp
Standby Voltage-Min
3.14 V
Number of Words Code
64K
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Package Equivalence Code
QFP100,.63X.87
Operating Temperature-Max
85 Cel
Operating Temperature-Min
-40 Cel
Supply Voltage-Max (Vsup)
3.63 V
Supply Voltage-Min (Vsup)
3.135 V
Supply Voltage-Nom (Vsup)
3.3 V
Clock Frequency-Max (fCLK)
66 MHz
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30