Renesas Electronics Corp. HM216514TTI5SLZ | 搜芯易Sourcengine

Renesas Electronics Corp. HM216514TTI5SLZ

生命周期状态
EOL
说明
Low Power SRAM
类别
Semiconductors Memory ICs SRAMs STANDARD SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PDSO-G44
Memory Width
16
Package Code
TSOP
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
GULL WING
Memory IC Type
STANDARD SRAM
Operating Mode
ASYNCHRONOUS
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Memory Organization
512KX16
Number of Terminals
44
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
55
Number of Words Code
512K
Memory Density (bits)
8388608
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
5
Number of Words (words)
524288
Standby Current-Max (A)
1.0E-5
Standby Voltage-Min (V)
2
Supply Current-Max (mA)
35
Package Equivalence Code
TSOP44,.46,32
Moisture Sensitivity Level
1
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Width
10.16
Length
18.41