GS8132018CQ-333MQ
GSI Technology, Inc.
- 生命周期状态Active
- REACHREACH compliant
- 说明Cache SRAM, 8MX18, 4.5ns, CMOS, CQFP100
- 类别
- ECCN3A991.B.2.B
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- I/O TypeCOMMON
- TechnologyCMOS
- Total Dose300k Rad(Si) V
- Width (mm)16
- Length (mm)20
- JESD-30 CodeR-CQFP-G100
- Memory Width18
- Package CodeQFP
- Output EnableYES
- Package ShapeRECTANGULAR
- Package StyleFLATPACK Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory IC TypeCACHE SRAM
- Operating ModeSYNCHRONOUS
- Parallel/SerialPARALLEL
- Terminal PositionQUAD
- Additional FeatureFLOW-THROUGH OR PIPELINED ARCHITECTURE, IT ALSO REQUIRES 3.3V NOMINAL SUPPLY VOLTAGE
- Memory Organization8MX18
- Number of Functions1
- Number of Terminals100
- Terminal Pitch (mm)0.65
- Access Time-Max (ns)4.5
- Number of Words Code8M
- Memory Density (bits)150994944
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Seated Height-Max (mm)3.03
- Supply Voltage-Max (V)2.7
- Supply Voltage-Min (V)2.3
- Supply Voltage-Nom (V)2.5
- Number of Words (words)8388608
- Standby Voltage-Min (V)2.3
- Package Equivalence CodeQFP100,.7X.9
- Clock Frequency-Max (MHz)333
- Operating Temperature-Max (Cel)125
- Operating Temperature-Min (Cel)-55
- Screening Level / Reference StandardMIL-PRF-38535 Class Q
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GS8132018CQ-333MQ