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EMF9T2R

ROHM Semiconductor

ROHM Semiconductor EMF9T2R
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • Application
    SWITCHING
  • JESD-30 Code
    R-PDSO-F6
  • Configuration
    SINGLE WITH BUILT IN BIPOLAR TRANSISTOR AND DIODE
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE Meter
  • Surface Mount
    YES
  • Terminal Form
    FLAT
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • J-STD-609 Code
    e2
  • Operating Mode
    ENHANCEMENT MODE
  • Terminal Finish
    Tin/Copper (Sn/Cu)
  • DLA Qualification
    Not Qualified
  • Terminal Position
    DUAL
  • Number of Elements
    1
  • Number of Terminals
    6
  • Package Body Material
    PLASTIC/EPOXY
  • Polarity/Channel Type
    N-CHANNEL
  • DC Current Gain-Min (hFE)
    270
  • Power Dissipation-Max (W)
    0.15
  • Drain Current-Max (ID) (A)
    0.1
  • Moisture Sensitivity Level
    1
  • Transistor Element Material
    SILICON
  • DS Breakdown Voltage-Min (V)
    30
  • Peak Reflow Temperature (Cel)
    260
  • Collector Current-Max (IC) (A)
    0.5
  • Operating Temperature-Max (Cel)
    150
  • Drain-source On Resistance-Max (ohm)
    8
  • Time@Peak Reflow Temperature-Max (s)
    30

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EMF9T2R