Cypress Semiconductor Corporation CY7B1061-3GC | 搜芯易Sourcengine

Cypress Semiconductor Corporation CY7B1061-3GC

生命周期状态
Discontinued
说明
Cache SRAM, 128KX18, 3ns, BICMOS
类别
Semiconductors Memory ICs SRAMs CACHE SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
BICMOS
Memory Width
18
Output Enable
YES
Memory IC Type
CACHE SRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Additional Feature
3.3V GTL COMPATIBLE I/O
Memory Organization
128KX18
Number of Functions
1
Access Time-Max (ns)
3
Number of Words Code
128K
Memory Density (bits)
2359296
Supply Voltage-Nom (V)
3.3
Number of Words (words)
131072
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0