Renesas Electronics Corp. 71V35761SA183BQGI | 搜芯易Sourcengine

Renesas Electronics Corp. 71V35761SA183BQGI

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Cache SRAM, 128KX36, 3.3ns, CMOS, PBGA165
类别
Semiconductors Memory ICs SRAMs CACHE SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

Technology
CMOS
JESD-30 Code
X-PBGA-B165
Memory Width
36
Package Code
BGA
Package Shape
UNSPECIFIED
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
CACHE SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
TIN SILVER COPPER
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Memory Organization
128KX36
Number of Functions
1
Number of Terminals
165
Access Time-Max (ns)
3.3
Number of Words Code
128K
Memory Density (bits)
4718592
Package Body Material
PLASTIC/EPOXY
Supply Voltage-Max (V)
3.465
Supply Voltage-Min (V)
3.135
Supply Voltage-Nom (V)
3.3
Number of Words (words)
131072
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40