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7164L85TPGB8

Renesas Electronics Corp.

Renesas Electronics Corp. 7164L85TPGB8
  • ECCN
    3A001.a.2.c
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.41
  • SB Code
    8542.32.00.40
  • Technology
    CMOS
  • JESD-30 Code
    R-PDIP-T28
  • Memory Width
    8
  • Package Code
    DIP
  • Package Shape
    RECTANGULAR
  • Package Style
    IN-LINE Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • Memory IC Type
    STANDARD SRAM
  • Operating Mode
    ASYNCHRONOUS
  • Parallel/Serial
    PARALLEL
  • Temperature Grade
    MILITARY
  • Terminal Position
    DUAL
  • Memory Organization
    8KX8
  • Number of Functions
    1
  • Number of Terminals
    28
  • Access Time-Max (ns)
    85
  • Number of Words Code
    8K
  • Memory Density (bits)
    65536
  • Package Body Material
    PLASTIC/EPOXY
  • Supply Voltage-Max (V)
    5.5
  • Supply Voltage-Min (V)
    4.5
  • Supply Voltage-Nom (V)
    5
  • Number of Words (words)
    8192
  • Supply Current-Max (mA)
    100
  • Operating Temperature-Max (Cel)
    125
  • Operating Temperature-Min (Cel)
    -55
  • Screening Level / Reference Standard
    MIL-STD-883 Class B

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7164L85TPGB8
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7164L85TPGB8