RF Small Signal Field-Effect Transistors
| 型号 | 说明 | 供应商库存 | 价格范围 | |
|---|---|---|---|---|
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET 产品规格书 |
| $5.82750 $5.82750 | 检查供应情况 | |
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET 产品规格书 |
| $0.54113 $0.54113 | 检查供应情况 | |
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-206AF 产品规格书 |
| $37.53321 $37.53321 | 检查供应情况 | |
RF Power Transistor, 1.805 to 1.990 GHz, 470 W, 15.7 dB, 28 V, SOT1258-3, LDMOS 产品规格书 |
| $97.69249 $98.98333 | 检查供应情况 | |
RF Power Transistor, 0.40 to 0.86 GHz, 30 W, 20.2 dB, 50 V, TO270, LDMOS 产品规格书 |
| $28.01418 $29.78168 | 检查供应情况 | |
VISHAY - U310 - JFET Transistor, Junction Field Effect, -25 V, 60 mA, 6 V, TO-206AC, 3 Pin, 150 °C 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Transistor, 0.60 to 1 GHz, 500 W, 48 V, OMP780, LDMOS 产品规格书 |
| $46.49631 $46.49631 | 检查供应情况 | |
RF Power Transistor, 0.47 to 0.86 GHz, 1000 W, 20 dB, 50 V, SOT539B, LDMOS 产品规格书 |
| $229.96514 $229.96514 | 检查供应情况 | |
BLC2425M8LS300PZ 产品规格书 |
| $111.91945 $135.60038 | 检查供应情况 | |
RF Small Signal Field-Effect Transistor 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, High Electron Mobility FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, High Electron Mobility FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, High Electron Mobility FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, High Electron Mobility FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, High Electron Mobility FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, High Electron Mobility FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
General Purpose Inductor, 0.24uH, 20%, 1 Element, Wirewound-Core, SMD, 0806 产品规格书 |
| N/A N/A | 检查供应情况 |