RF Power Field-Effect Transistors
| 型号 | 说明 | 供应商库存 | 价格范围 | |
|---|---|---|---|---|
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon Carbide, N-Channel, High Electron Mobility FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
390W, GAN HEMT, 48V, 2496-2690MH 产品规格书 |
| N/A N/A | 检查供应情况 | |
| N/A N/A | 检查供应情况 | ||
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
Microwave Generator, 2400 to 2500 MHz, 500 W CW, 32 V, 160 x 700 x 400 mm |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Nitride, N-Channel, High Electron Mobility FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
Trans RF MOSFET N-CH 125V 16A 5-Pin Case 375-04 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF TRANS NPN 12V SOT143 产品规格书 |
| $5.98233 $5.98233 | 检查供应情况 | |
RF POWER TRANSISTOR 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Nitride, N-Channel, High Electron Mobility FET 产品规格书 |
| $84.07200 $84.07200 | 检查供应情况 | |
RF Power Field-Effect Transistor 产品规格书 |
| $386.71990 $386.71990 | 检查供应情况 | |
RF Power Field-Effect Transistor, 2-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 |