EXCELICS SEMICONDUCTOR INC EPA120E-CP083 | 搜芯易Sourcengine

EXCELICS SEMICONDUCTOR INC EPA120E-CP083

生命周期状态
Discontinued
说明
RF Power Field-Effect Transistor, 1-Element, KU Band, Silicon, N-Channel, Hetero-junction FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-CDSO-G2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
HETERO-JUNCTION
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Position
DUAL
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
2
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
KU BAND
Drain Current-Max (ID) (A)
0.405
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
8