RF Power Field-Effect Transistors
| 型号 | 说明 | 供应商库存 | 价格范围 | |
|---|---|---|---|---|
150-W; 2900 – 3500-MHz; 50-V; GaN HEMT for S-Band Radar Systems |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor 产品规格书 |
| $1276.66270 $1276.66270 | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
Dual Long-Tailed Pair Transistor Array 产品规格书 |
| N/A N/A | 检查供应情况 | |
490W, GAN HEMT, 48V, 2110-2200MH 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 2-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
200W, GAN HEMT, 48V, 3400-3600MH 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, High Electron Mobility FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, High Electron Mobility FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, C Band, Gallium Arsenide, N-Channel, Junction FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Bipolar Transistors Transistor Si Low Current 产品规格书 |
| $9.02207 $10.00858 | 检查供应情况 | |
RF SMALL SIGNAL TRANSISTOR 产品规格书 |
| $2.17638 $2.17638 | 检查供应情况 | |
Trans RF BJT NPN 10V 0.03A 150mW 3-Pin SC-70 T/R 产品规格书 |
| $0.29320 $0.29320 | 检查供应情况 | |
Ultra High Frequency Transistor Arrays 产品规格书 |
| $4.04258 $4.04258 | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET 产品规格书 |
| $154.42490 $154.42490 | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET 产品规格书 |
| N/A N/A | 检查供应情况 | |
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET 产品规格书 |
| N/A N/A | 检查供应情况 |