Insulated Gate Bipolar Transistors

IGBT 1200V 70A 350W TO264AA

Insulated Gate Bipolar Transistor, 50A I(C), 900V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 50A I(C), 900V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 20A I(C), 500V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor

IGBT 1200V 24A 75W TO220

Insulated Gate Bipolar Transistor, 40A I(C), 1000V V(BR)CES, N-Channel, TO-220AB

IGBT 600V 48A 150W TO220AB

Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 50A I(C), 1000V V(BR)CES

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-220AB

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES

Insulated Gate Bipolar Transistor, 50A I(C), 900V V(BR)CES

IGBT, IXGT10N170, LITTELFUSE A high voltage IGBT with high current handling capability, a rugged NPT structure, and advantages such as high power density, ease of mounting with one screw, and being suitable for surface mounting. Features International standard package MOS gate turn-on - drive simplicity Molding epoxies meet UL 94 V-0 flammability classification Applications Capacitor discharge and pulser circuits AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies

IGBT 600V 45A 140W ISOPLUS247

IGBT 600V 40A 150W TO268

IGBT Transistors very high voltage npt igbt

Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, TO-268AA

IGBT 600V 60A 200W TO268

Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel

IGBT 1200V 70A 350W PLUS247

Insulated Gate Bipolar Transistor, 400A I(C), 300V V(BR)CES, N-Channel

Trans IGBT Chip N-CH 1700V 6A 75W 3-Pin(2+Tab) TO-268 T/R

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-268AA

IGBT 1200V 200A 830W PLUS247