Insulated Gate Bipolar Transistors

Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 65A I(C), 600V V(BR)CES, N-Channel

Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-247AD

Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-247AC

Insulated Gate Bipolar Transistor, 46A I(C), 360V V(BR)CES, N-Channel, TO-263AB

Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-220AB

Insulated Gate Bipolar Transistor, 60A I(C), 1350V V(BR)CES, N-Channel, TO-247

Insulated Gate Bipolar Transistor, 65A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 65A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel

IGBT, IXA33IF1200HB, Littelfuse Manufactured through the state-of-the-art GenX IGBT process and an extreme-light punch through design platform, this device features high-current handling capabilities, high-speed switching abilities, low total energy loss, and low current fall times. It has a positive collector-to-emitter voltage temperature coefficient, making it possible for designers to use multiple devices in parallel to meet high current requirements. Features Easy paralleling due to the positive temperature coefficient of the on-state voltage Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) Applications AC motor drives Solar inverter Medical equipment Uninterruptible power supply Air-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies Inductive heating, cookers Pumps, fans

Trans IGBT Chip N-CH 1200V 9A 45W

IGBT Transistors igbt xpt-genx3

IGBT, IXBF42N300, Littelfuse BiMOSFETs is a component in which the strengths of MOSFETs and IGBTs are combined.This high-voltage device is ideal for parallel operation due to the positive temperature coefficient of the saturation voltage and the forward voltage drop of the inner diode. In addition, this "free" intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current when the device is turned off and preventing high Ldi/dt voltage transients from damaging the device. Features High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity Easy to mount Applications Switched-mode and resonant-mode power supplies Uninterruptible Power Supplies (UPS) Laser and X-ray generators Capacitor discharge circuits High voltage pulser circuits High voltage test equipment AC switches

IGBT, IXBF55N300, Littelfuse BiMOSFETs is a component in which the strengths of MOSFETs and IGBTs are combined.This high-voltage device is ideal for parallel operation due to the positive temperature coefficient of the saturation voltage and the forward voltage drop of the inner diode. In addition, this "free" intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current when the device is turned off and preventing high Ldi/dt voltage transients from damaging the device. Features High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity Easy to mount Applications Switched-mode and resonant-mode power supplies Uninterruptible Power Supplies (UPS) Laser and X-ray generators Capacitor discharge circuits High voltage pulser circuits High voltage test equipment AC switches

Insulated Gate Bipolar Transistor, 20A I(C), 1600V V(BR)CES, N-Channel, TO-247AD

Insulated Gate Bipolar Transistor, 33A I(C), 1400V V(BR)CES, N-Channel, TO-247AD

IGBTs disc igbt bimosfet-high volt

IGBT, IXBH42N300HV, Littelfuse BiMOSFETs is a component in which the strengths of MOSFETs and IGBTs are combined.This high-voltage device is ideal for parallel operation due to the positive temperature coefficient of the saturation voltage and the forward voltage drop of the inner diode. In addition, this "free" intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current when the device is turned off and preventing high Ldi/dt voltage transients from damaging the device. Features High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity Easy to mount Applications Switched-mode and resonant-mode power supplies Uninterruptible Power Supplies (UPS) Laser and X-ray generators Capacitor discharge circuits High voltage pulser circuits High voltage test equipment AC switches

Insulated Gate Bipolar Transistor, 9A I(C), 1600V V(BR)CES, N-Channel, TO-247AD

Insulated Gate Bipolar Transistor, 5.7A I(C), 1400V V(BR)CES, N-Channel, TO-220AB

IGBT 1700V 57A 200W ISOPLUS247

IGBTs isoplus 2500v 46a bimsft

Trans IGBT Chip N-CH 2500V 156A 735W 3-Pin(3+Tab) PLUS 247

Insulated Gate Bipolar Transistor, 70A I(C), 3600V V(BR)CES, N-Channel, TO-268AA