Insulated Gate Bipolar Transistors

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel

IGBT 600V 220W TO247

Insulated Gate Bipolar Transistor, 36A I(C), 600V V(BR)CES, N-Channel, TO-247AD

IGBT 300V 75A 300W TO247AD

IGBT 2500V 13A 150W TO247

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-264AA

Insulated Gate Bipolar Transistor, 230A I(C), 1200V V(BR)CES, N-Channel, TO-264AA

Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 40A I(C), 1000V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 60A I(C), 300V V(BR)CES, N-Channel, TO-247AD

IGBT Transistors b2-optimized for medium frequency application (single igbt)

IGBT 600V 75A 300W TO264

Insulated Gate Bipolar Transistor, 50A I(C), 800V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 50A I(C), 500V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 500V V(BR)CES, N-Channel

Insulated Gate Bipolar Transistor, 20A I(C), 1000V V(BR)CES, N-Channel

IGBT 600V 40A 150W TO220

IGBT 600V 56A 190W TO220

IGBT 1200V 90A ISOPLUS247

IGBT, IXGR16N170AH1, LITTELFUSE A high voltage IGBT with an anti-parallel sonic diode, and with advantages such as high power density, and low gate drive requirements. Features Silicon chip on direct-copper bond (DCB) substrate Isolated mounting surface 2500 V electrical isolation International standard package Applications Capacitor discharge and pulser circuits DC choppers UPS Switch-mode and resonant-mode power supplies DC servo and robot drives AC motor drives Robotics and servo controls

IGBT 600V 45A 140W ISOPLUS247

Insulated Gate Bipolar Transistor

IGBT 600V 70A 190W TO268

Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-268AA