WMYB256K18V-10TQI
WHITE MICROELECTRONICS
- 生命周期状态Discontinued
- 说明Cache SRAM, 256KX18, 4ns, CMOS, CQFP100
- 类别
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- TechnologyCMOS
- JESD-30 CodeR-CQFP-G100
- Memory Width18
- Package CodeQFP
- Package ShapeRECTANGULAR
- Package StyleFLATPACK Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory IC TypeCACHE SRAM
- Operating ModeSYNCHRONOUS
- Parallel/SerialPARALLEL
- DLA QualificationNot Qualified
- Temperature GradeINDUSTRIAL
- Terminal PositionQUAD
- Additional FeatureSELF-TIMED WRITE; BURST COUNTER; BYTE WRITE; LINEAR/INTERLEAVED BURST SEQUENCE
- Memory Organization256KX18
- Number of Functions1
- Number of Terminals100
- Access Time-Max (ns)4
- Number of Words Code256K
- Memory Density (bits)4718592
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Supply Voltage-Max (V)3.465
- Supply Voltage-Min (V)3.135
- Supply Voltage-Nom (V)3.3
- Number of Words (words)262144
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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WMYB256K18V-10TQI