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VS12G422TDC-5

VITESSE SEMICONDUCTOR CORP

VITESSE SEMICONDUCTOR CORP VS12G422TDC-5
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.41
  • SB Code
    8542.32.00.40
  • I/O Type
    SEPARATE
  • Technology
    MOS
  • Width (mm)
    10.16
  • Length (mm)
    28
  • JESD-30 Code
    R-CDIP-T22
  • Memory Width
    4
  • Package Code
    DIP
  • Output Enable
    YES
  • Package Shape
    RECTANGULAR
  • Package Style
    IN-LINE Meter
  • Surface Mount
    NO
  • Terminal Form
    THROUGH-HOLE
  • J-STD-609 Code
    e0
  • Memory IC Type
    CACHE SRAM
  • Operating Mode
    ASYNCHRONOUS
  • Number of Ports
    1
  • Parallel/Serial
    PARALLEL
  • Terminal Finish
    TIN LEAD
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    COMMERCIAL
  • Terminal Position
    DUAL
  • Memory Organization
    256X4
  • Number of Functions
    1
  • Number of Terminals
    22
  • Terminal Pitch (mm)
    2.54
  • Access Time-Max (ns)
    5
  • Number of Words Code
    256
  • Memory Density (bits)
    1024
  • Package Body Material
    CERAMIC, METAL-SEALED COFIRED
  • Output Characteristics
    3-STATE
  • Seated Height-Max (mm)
    4.64
  • Supply Voltage-Max (V)
    5.25
  • Supply Voltage-Min (V)
    4.75
  • Supply Voltage-Nom (V)
    5
  • Number of Words (words)
    256
  • Supply Current-Max (mA)
    300
  • Package Equivalence Code
    DIP22,.4
  • Operating Temperature-Max (Cel)
    70
  • Operating Temperature-Min (Cel)
    0

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VS12G422TDC-5
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VS12G422TDC-5