ROHM Semiconductor US6X4TR | 搜芯易Sourcengine

ROHM Semiconductor US6X4TR

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans GP BJT NPN 30V 2A 1000mW 6-Pin TUMT T/R
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-F6
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
J-STD-609 Code
e2
Terminal Finish
Tin/Copper (Sn/Cu)
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
270
Power Dissipation-Max (W)
0.4
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
2
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
30
Transition Frequency-Nom (fT) (MHz)
280
Time@Peak Reflow Temperature-Max (s)
30