Renesas Electronics Corp. UPD488170LVN-A45-9 | 搜芯易Sourcengine

Renesas Electronics Corp. UPD488170LVN-A45-9

生命周期状态
Discontinued
说明
Rambus DRAM, 2MX9, CMOS
类别
Semiconductors Memory ICs DRAMs RAMBUS DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Memory Width
9
Organization
2MX9
JESD-609 Code
e0
Surface Mount
YES
Memory Density
18874368 bit
Memory IC Type
RAMBUS DRAM
Refresh Cycles
1024
Terminal Pitch
2.54 mm
Number of Words
2097152 words
Terminal Finish
Tin/Lead (Sn/Pb)
Temperature Grade
COMMERCIAL
Terminal Position
SINGLE
Supply Current-Max
440 mA
Number of Terminals
32
Standby Current-Max
0.125 Amp
Number of Words Code
2M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Package Equivalence Code
SMSIP32,25
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Nom (Vsup)
3.3 V
Clock Frequency-Max (fCLK)
225 MHz