Renesas Electronics Corp. UPD48576109FF-E33-DW1-A | 搜芯易Sourcengine

Renesas Electronics Corp. UPD48576109FF-E33-DW1-A

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR DRAM, 64MX9, 0.25ns, CMOS, PBGA144
类别
Semiconductors Memory ICs DRAMs DDR DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

I/O Type
SEPARATE
Technology
CMOS
Width (mm)
11
Access Mode
MULTI BANK PAGE BURST
Length (mm)
18.5
JESD-30 Code
R-PBGA-B144
Memory Width
9
Package Code
TBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
AUTO REFRESH
Memory Organization
64MX9
Number of Functions
1
Number of Terminals
144
Terminal Pitch (mm)
1
Access Time-Max (ns)
0.25
Number of Words Code
64M
Memory Density (bits)
603979776
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.17
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
67108864
Sequential Burst Length
2,4,8
Standby Current-Max (A)
0.055
Supply Current-Max (mA)
716
Interleaved Burst Length
2,4,8
Package Equivalence Code
BGA144,12X18,40/32
Clock Frequency-Max (MHz)
300
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
0