UPD48288236AF1-E18-DW1-A
Renesas Electronics Corp.
- 生命周期状态EOL
- RoHS符合RoHS标准
- 说明Low Latency DRAM
- 类别
- ECCN5A002
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- Width11
- Length18.5
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B144
- Memory Width36
- Organization8MX36
- Package CodeTBGA
- JESD-609 Codee6
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density301989888 bit
- Memory IC TypeDDR SRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch1 mm
- Number of Words8388608 words
- Parallel/SerialPARALLEL
- Terminal FinishTIN BISMUTH
- Seated Height-Max1.2 mm
- Terminal PositionBOTTOM
- Additional FeatureTERM PITCH-MAX
- Number of Functions1
- Number of Terminals144
- Number of Words Code8M
- Package Body MaterialPLASTIC/EPOXY
- Supply Voltage-Max (Vsup)1.9 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
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UPD48288236AF1-E18-DW1-A