Renesas Electronics Corp. UPD464536ALS1-A55 | 搜芯易Sourcengine

Renesas Electronics Corp. UPD464536ALS1-A55

生命周期状态
Discontinued
说明
Late-Write SRAM, 128KX36, 5.5ns, BICMOS, PBGA119
类别
Semiconductors Memory ICs SRAMs LATE-WRITE SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
BICMOS
JESD-30 Code
R-PBGA-B119
Memory Width
36
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
LATE-WRITE SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Memory Organization
128KX36
Number of Terminals
119
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
5.5
Number of Words Code
128K
Memory Density (bits)
4718592
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
3.3
Number of Words (words)
131072
Standby Current-Max (A)
0.045
Standby Voltage-Min (V)
3.15
Supply Current-Max (mA)
650
Package Equivalence Code
BGA119,7X17,50