UPD46185362BF1-E40-EQ1-A
Renesas Electronics Corp.
- 生命周期状态EOL
- RoHS符合RoHS标准
- 说明QDRII/DDRII/ QDRII+/DDRII+ SRAM
- 类别
- ECCN5A002
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- Width13
- Length15
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B165
- Memory Width36
- Organization512KX36
- Package CodeLBGA
- JESD-609 Codee6
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, LOW PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density18874368 bit
- Memory IC TypeQDR SRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch1 mm
- Access Time-Max0.45 ns
- Number of Words524288 words
- Parallel/SerialPARALLEL
- Terminal FinishTIN BISMUTH
- Seated Height-Max1.46 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Number of Functions1
- Number of Terminals165
- Number of Words Code512K
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)1.9 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
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UPD46185362BF1-E40-EQ1-A