Renesas Electronics Corp. UPD44323182F1-C50-FJ1 | 搜芯易Sourcengine

Renesas Electronics Corp. UPD44323182F1-C50-FJ1

生命周期状态
Discontinued
说明
Late-Write SRAM, 2MX18, 2.5ns, CMOS, PBGA119
类别
Semiconductors Memory ICs SRAMs LATE-WRITE SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B119
Memory Width
18
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
LATE-WRITE SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Memory Organization
2MX18
Number of Terminals
119
Terminal Pitch (mm)
1.27
Access Time-Max (ns)
2.5
Number of Words Code
2M
Memory Density (bits)
37748736
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Number of Words (words)
2097152
Standby Current-Max (A)
0.15
Standby Voltage-Min (V)
2.37
Supply Current-Max (mA)
550
Package Equivalence Code
BGA119,7X17,50
Clock Frequency-Max (MHz)
200
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0