Renesas Electronics Corp. UPD44321181GF-C75Y | 搜芯易Sourcengine

Renesas Electronics Corp. UPD44321181GF-C75Y

生命周期状态
Discontinued
说明
ZBT SRAM, 2MX18, 7.5ns, CMOS, PQFP100
类别
Semiconductors Memory ICs SRAMs ZBT SRAM

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
Width (mm)
14
Length (mm)
20
JESD-30 Code
R-PQFP-G100
Memory Width
18
Package Code
LQFP
Package Shape
RECTANGULAR
Package Style
FLATPACK, LOW PROFILE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e0
Memory IC Type
ZBT SRAM
Operating Mode
SYNCHRONOUS
Parallel/Serial
PARALLEL
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
QUAD
Additional Feature
FLOW-THROUGH ARCHITECTURE
Memory Organization
2MX18
Number of Functions
1
Number of Terminals
100
Terminal Pitch (mm)
0.65
Access Time-Max (ns)
7.5
Number of Words Code
2M
Memory Density (bits)
37748736
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.7
Supply Voltage-Max (V)
2.625
Supply Voltage-Min (V)
2.375
Supply Voltage-Nom (V)
2.5
Number of Words (words)
2097152
Standby Current-Max (A)
0.06
Standby Voltage-Min (V)
2.38
Package Equivalence Code
QFP100,.63X.87
Clock Frequency-Max (MHz)
117
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40