UPD4217101V-80
Renesas Electronics Corp.
- 生命周期状态Discontinued
- 说明Nibble Mode DRAM, 16MX1, 80ns, CMOS, PZIP24
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeSEPARATE
- TechnologyCMOS
- JESD-30 CodeR-PZIP-T24
- Memory Width1
- Organization16MX1
- Package CodeZIP
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleIN-LINE Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Memory Density16777216 bit
- Memory IC TypeNIBBLE MODE DRAM
- Refresh Cycles2048
- Terminal Pitch1.27 mm
- Access Time-Max80 ns
- Number of Words16777216 words
- Terminal FinishTin/Lead (Sn/Pb)
- Temperature GradeCOMMERCIAL
- Terminal PositionZIG-ZAG
- Number of Terminals24
- Number of Words Code16M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeZIP24,.1
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Nom (Vsup)5 V
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UPD4217101V-80