Renesas Electronics Corp. UPD4216412V-10 | 搜芯易Sourcengine

Renesas Electronics Corp. UPD4216412V-10

生命周期状态
Discontinued
说明
Static Column DRAM, 4MX4, 100ns, CMOS, PZIP24
类别
Semiconductors Memory ICs DRAMs STATIC COLUMN DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PZIP-T24
Memory Width
4
Organization
4MX4
Package Code
ZIP
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Memory Density
16777216 bit
Memory IC Type
STATIC COLUMN DRAM
Refresh Cycles
4096
Reverse Pinout
YES
Terminal Pitch
1.27 mm
Access Time-Max
100 ns
Number of Words
4194304 words
Terminal Finish
Tin/Lead (Sn/Pb)
Temperature Grade
COMMERCIAL
Terminal Position
ZIG-ZAG
Number of Terminals
24
Number of Words Code
4M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Package Equivalence Code
ZIP24,.1
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Nom (Vsup)
5 V