Renesas Electronics Corp. UPA813T-T1 | 搜芯易Sourcengine

Renesas Electronics Corp. UPA813T-T1

生命周期状态
Discontinued
REACH
REACH compliant
说明
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G6
Configuration
SEPARATE, 2 ELEMENTS
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Number of Elements
2
Number of Terminals
6
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
DC Current Gain-Min (hFE)
60
Operating Temperature-Max
125 Cel
Collector Current-Max (IC)
0.03 A
Power Dissipation-Max (Abs)
0.16 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
12 V
Transition Frequency-Nom (fT)
5500 MHz
Collector-base Capacitance-Max
0.9 pF