Renesas Electronics Corp. UPA811T-T1-A | 搜芯易Sourcengine

Renesas Electronics Corp. UPA811T-T1-A

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
RF SMALL SIGNAL TRANSISTOR
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G6
Configuration
SEPARATE, 2 ELEMENTS
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
2
Number of Terminals
6
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
DC Current Gain-Min (hFE)
80
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
0.035 A
Power Dissipation-Max (Abs)
0.2 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
10 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Transition Frequency-Nom (fT)
8000 MHz
Collector-base Capacitance-Max
0.7 pF
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED