Renesas Electronics Corp. UPA802T-T1-A | 搜芯易Sourcengine

Renesas Electronics Corp. UPA802T-T1-A

生命周期状态
EOL
RoHS
符合RoHS标准
说明
RF SMALL SIGNAL TRANSISTOR
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G6
Configuration
SEPARATE, 2 ELEMENTS
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Additional Feature
LOW NOISE
Number of Elements
2
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
Highest Frequency Band
HIGH FREQUENCY BAND
Power Gain-Min (Gp) (dB)
10
DC Current Gain-Min (hFE)
70
Power Dissipation-Max (W)
0.2
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.065
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
10
Power Dissipation Ambient-Max (W)
0.2
Collector-base Capacitance-Max (pF)
0.9
Transition Frequency-Nom (fT) (MHz)
7000